1 ha-2600, ha-2605 12mhz, high input impedance operational ampli?rs ha-2600/2605 are internally compensated bipolar operational ampli?rs that feature very high input impedance (500m ? , ha-2600) coupled with wideband ac performance. the high resistance of the input stage is complemented by low offset voltage (0.5mv, ha-2600) and low bias and offset current (1na, ha-2600) to facilitate accurate signal processing. input offset can be reduced further by means of an external nulling potentiometer. 12mhz unity gain- bandwidth, 7v/ s slew rate and 150kv/v open-loop gain enables ha-2600/2605 to perform high-gain ampli?ation of fast, wideband signals. these dynamic characteristics, coupled with fast settling times, make these ampli?rs ideally suited to pulse ampli?ation designs as well as high frequency (e.g. video) applications. the frequency response of the ampli?r can be tailored to exact design requirements by means of an external bandwidth control capacitor. in addition to its application in pulse and video ampli?r designs, ha-2600/2605 are particularly suited to other high performance designs such as high-gain low distortion audio ampli?rs, high-q and wideband active ?ters and high- speed comparators. for more information, please refer to application note an515. the ha-2600 is offered as /883 military grade; product and data sheet are available upon request. features bandwidth. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mhz high input impedance . . . . . . . . . . . . . . . . . . . . . 500m ? low input bias current . . . . . . . . . . . . . . . . . . . . . . . . 1na low input offset current . . . . . . . . . . . . . . . . . . . . . . 1na low input offset voltage . . . . . . . . . . . . . . . . . . . . 0.5mv high gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150kv/v slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7v/ s output short circuit protection unity gain stable applications video ampli?r pulse ampli?r audio ampli?rs and filters high-q active filters high-speed comparators low distortion oscillators pinouts ha-2605 (pdip) top view ha-2600/05 (metal can) top view ordering information part number temp. range ( o c) package pkg. no. ha2-2600-2 -55 to 125 8 pin metal can t8.c ha2-2605-5 0 to 75 8 pin metal can t8.c HA3-2605-5 0 to 75 8 ld pdip e8.3 1 2 3 4 8 7 6 5 + bal -in +in v- comp v+ out bal - comp out -in bal +in v+ bal 2 4 6 1 3 7 5 8 + v- - september 1998 file number 2902.3 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999
2 absolute maximum ratings thermal information supply voltage between v+ and v- terminals . . . . . . . . . . . . . 45v differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12v peak output current . . . . . . . . . . . . . . . full short circuit protection operating conditions temperature range ha-2600-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c ha-2605-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 o c to 75 o c thermal resistance (typical, note 1) ja ( o c/w) jc ( o c/w) metal can package . . . . . . . . . . . . . . . 165 80 pdip package . . . . . . . . . . . . . . . . . . . 96 n/a maximum junction temperature (hermetic package) . . . . . . . .175 o c maximum junction temperature (plastic package) . . . . . . . .150 o c maximum storage temperature range . . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . 300 o c caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. ja is measured with the component mounted on an evaluation pc board in free air. electrical speci?ations v supply = 15v, unless otherwise speci?d parameter temp. ( o c) ha-2600-2 ha-2605-5 units min typ max min typ max input characteristics offset voltage 25 - 0.5 4 - 3 5 mv full - 2 6 - - 7 mv average offset voltage drift full - 5 - - 5 - v/ o c bias current 25 - 1 10 - 5 25 na full - 10 30 - - 40 na offset current 25 - 1 10 - 5 25 na full - 5 30 - - 40 na differential input resistance (note 12) 25 100 500 - 40 300 - m ? input noise voltage density (f = 1khz) 25 - 11 - - 11 - nv/ hz input noise current density (f = 1khz) 25 - 0.16 - - 0.16 - pa/ hz common mode range full 11 12 - 11 12 - v transfer characteristics large signal voltage gain (notes 3, 6) 25 100 150 - 80 150 - kv/v full 70 - - 70 - - kv/v common mode rejection ratio (note 4) full 80 100 - 74 100 - db minimum stable gain 25 1 - - 1 - - v/v gain bandwidth product (note 5) 25 - 12 - - 12 - mhz output characteristics output voltage swing (note 3) full 10 12 - 10 12 - v output current (note 6) 25 15 22 - 10 18 - ma full power bandwidth (notes 6, 13) 25 50 75 - 50 75 - khz transient response (note 10) rise time (notes 3, 7, 8, 9) 25 - 30 60 - 30 60 ns overshoot (notes 3, 7, 8, 9) 25 - 25 40 - 25 40 % slew rate (notes 3, 7, 9, 14) 25 4 7- 4 7-v/ s settling time (notes 3, 7, 15) 25 - 1.5 - - 1.5 - s ha-2600, ha-2605
3 power supply characteristics supply current 25 - 3 3.7 - 3 4 ma power supply rejection ratio (note 11) full 80 90 - 74 90 - db notes: 2. typical and minimum specifications for -9 are identical to those of -5. all maximum specifications for -9 are identical to those of -5 except for full temperature bias and offset currents, which are 70na max. 3. r l = 2k ? . 4. v cm = 10v. 5. v out < 90mv. 6. v out = 10v. 7. c l = 100pf. 8. v out = 200mv. 9. a v = +1. 10. see transient response test circuits and waveforms. 11. ? v s = 5v. 12. this parameter value guaranteed by design calculations. 13. full power bandwidth guaranteed by slew rate measurement: . 14. v out = 5v 15. settling time is characterized at a v = -1 to 0.1% of a 10v step. test circuits and waveforms figure 1. transient response figure 2. slew rate figure 3. slew rate and transient response test circuit figure 4. suggested v os adjustment and compensation hook up electrical speci?ations v supply = 15v, unless otherwise speci?d (continued) parameter temp. ( o c) ha-2600-2 ha-2605-5 units min typ max min typ max fpbw slew rate 2 v peak --------------------------- = input 0v 200mv 90% output 10% 0v rise time 200mv note: measured on both positive and negative transitions from 0v to +200mv and 0v to -200mv at the output. input +5v -5v +5v 90% output 10% -5v slew rate = ? v/ ? t ? t ? v + - out in 2k ? 100pf out in bal v- v+ 100k ? comp c c r t note: tested offset adjustment range is |v os + 1mv| minimum referred to output. typical ranges are 10mv with r t = 100k ?. ha-2600, ha-2605
4 schematic diagram bal r 1 1k r 2 4.18k r 3 1.56k r 4 1.56k q 1 q 3 q 4 q 5 q 6 q 7 q 11 +input q 8 q 13 q 16 q 30 q 29 q 31 q 28 q 26 q 25 q 9 q 10 q 17 q 18 q 27 q 12 q 15 q 2 q 40 q 38 q 37 q 24 q 19 r 7 1.35 r 19 2.5k r p1 bal c 2 9pf r 5 600 r 6 15 v+ q 41 q 42 q 60 q 61 q 59 q 58 q 57 q 55 q 54 q 43 q 44 q 45 q 46 q 47 compensation out r 18 30 r 17 30 q 52 q 51 r 11 4.0k q 49 q 50 c 1 16pf r 12 1.6k r 13 1.6k r 14 2.1k q 22 q 23 r 9 4.5k r 10 2.0k q 21 q 48 r 15 800 q 36 q 35 q 32 q 33 q 56 q 53 r 16 15 v- q 20 r 8 1k -input q 39 c 3 16pf c 4 4pf typical applications note: a small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillation s resulting from external wiring parasitics. capacitance up to 100pf has negligible effect on the bandwidth or slew rate. figure 5. photo current to voltage converter figure 6. sample and hold 50pf (note) 6v v+ 5pf i b = 1na + + bal ha-2600 r = 40k ? silicon photo diode i p = 50 a +6v +2v 1 s v o = -r(i p i b ) - features: 1. constant cell voltage. 2. minimum bias current error. +5v +15v in digital control out 50pf (note) c multiplexer + -15v ha-2600 drift rate = i bias c if c = 1000pf then drift = 0.01v/ s (max) - ha-2600, ha-2605
5 note: a small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillation s resulting from external wiring parasitics. capacitance up to 100pf has negligible effect on the bandwidth or slew rate. figure 7. reference voltage amplifier figure 8. voltage follower typical performance curves v s = 15v, t a = 25 o c, unless otherwise speci?d figure 9. input bias current and offset current vs temperature figure 10. broadband noise characteristics figure 11. open loop frequency response figure 12. input impedance vs temperature (100hz) typical applications (continued) r 1 r 2 v+ 50pf (note) bal i bias v ref v o 1 r 2 r 1 ------ - ?? ?? ?? v ref + = + ha-2600 - features: 1. minimum bias current in reference cell. 2. short circuit protection. +15v in out 50pf (note) + -15v ha-2600 - features 1. z in = 10 12 ? (min). 2. z out = 0.01 ? (max), b.w. = 12mhz (typ). 3. slew rate = 4v/ s (min), output swing = 10v (min) to 50khz. 15 10 5 0 -5 -10 -15 -50 -25 0 25 50 75 100 125 current (na) temperature ( o c) bias offset 100 10 1 0.1 100hz 1khz 10khz 100khz 1mhz equivalent input noise ( v) 10mhz upper 3db frequency (lower 3db frequency = 10hz) 10k ? source 0 ? source thermal noise equivalent input noise vs bandwidth of 10k resistor resistance resistance 120 80 20 -20 10hz open loop voltage gain (db) frequency 100 60 40 0 100hz 1khz 10khz 100khz 1mhz 10mhz 100mhz gain phase 0 100 20 60 180 140 phase angle (degrees) temperature ( o c) 0 -35 5 45 105 125 impedance (m ? ) 1000 800 600 400 200 -55 25 -15 65 85 ha-2600, ha-2605
6 figure 13. output voltage swing vs frequency figure 14. open loop frequency response for various values of capacitors from compensation pin to ground figure 15. common mode voltage range vs supply voltage figure 16. open loop voltage gain vs temperature figure 17. common mode rejection ratio vs frequency figure 18. noise density vs frequency typical performance curves v s = 15v, t a = 25 o c, unless otherwise speci?d (continued) 10khz frequency 100khz 1mhz 10mhz 100mhz 20v supply 15v supply 10v supply 20 10 1 0.1 peak voltage swing ( v) 0.01 5v supply 120 0 100hz 10khz 1mhz 10mhz open loop voltage gain (db) 100 80 60 40 20 -20 10hz 100khz 1khz 100pf 1000pf 0pf 30pf 10pf 300pf frequency (hz) note: external compensation components are not required for stability, but may be added to reduce bandwidth if desired. if external compensa- tion is used, also connect 100pf capacitor from output to ground. 20 15 10 5 5101520 supply voltage ( v) common mode range ( v) -55 o c to 125 o c temperature ( o c) 120 100 80 -55 -35 -15 5 25 45 65 85 105 125 gain (db) 20v supply 15v supply 10v supply 5v supply 120 100 80 60 40 20 0 common mode rejection ratio (db) frequency 100hz 1khz 10khz 100khz 1mhz input noise current input noise voltage 1000 100 10 1 1 10 100 1k 10k 100k 0.01 0.1 1 10 frequency (hz) input noise voltage (nv/ hz) input noise current (pa/ hz) ha-2600, ha-2605
7 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com die characteristics die dimensions: 69 mils x 56 mils x 19 mils 1750 m x 1420 m x 483 m metallization: type: al, 1% cu thickness: 16k ? 2k ? substrate potential (powered up): unbiased passivation: type: nitride (si 3 n 4 ) over silox (sio 2 , 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? transistor count: 140 process: bipolar dielectric isolation metallization mask layout ha-2600, ha-2605 +in -in bal comp v+ out bal v- ha-2600, ha-2605
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